Tungsten Crucible in Sapphire Crystal Growth
Tungsten crucible in sapphire crystal growth refers to the high-temperature containment component deployed in sapphire single crystal growth equipment. It reliably contains alumina melt within vacuum or inert atmospheres while providing stable thermal field boundary conditions for crystal growth.
Manufactured from premium high-purity tungsten (W ≥ 99.95%) through powder metallurgy sintering, hot spinning, and precision CNC (Computer Numerical Control) machining, CTIA's tungsten crucible is engineered for sapphire crystal growth and advanced optoelectronic material fabrication.
Why Select Tungsten Crucibles for Sapphire Crystal Growth?
Sapphire crystal growth typically employs melt crystallization techniques where process temperatures exceed 2000°C under sustained thermal field control over extended periods, demanding exceptional material purity and structural stability from the crucible. Featuring an ultra-high melting point, low vapor pressure, and excellent high-temperature creep resistance, tungsten crucibles maintain structural integrity against aggressive alumina melts while minimizing impurity ingress risks. Consequently, they serve as critical containment components in sapphire growth systems.
Advantages of CTIA's Tungsten Crucibles in Sapphire Growth
1.High Temperature Resistance: With melting point of approximately 3410°C, they achieve stable long-term service at temperatures exceeding 2000°C.
2.Minimal Contamination: High-purity raw tungsten powder with low impurity content mitigates crystal growth contamination risks.
3.Thermal Stability: Maintains structural integrity under high temperature gradients and cyclic thermal loads.
4.Creep Resistance: Low deformation during prolonged high-temperature exposure preserves geometric precision.
5.Thermal Field Uniformity: High thermal conductivity facilitates a stable temperature field, enhancing crystal yields.
Applications of CTIA's Tungsten Crucibles in Sapphire Growth
(1) Kyropoulos Method (泡生法): Sustaining stable alumina melt containment in Kyropoulos sapphire single crystal growth.
(2) Czochralski Method (提拉法): Providing reliable crucibles for continuous crystal pulling and steady liquid-level control.
(3) Alumina Melting: Facilitating precise temperature gradients during high-temperature melting and crystallization.
(4) Optical Sapphire Fabrication: Ensuring ultra-low contamination for high-purity optical sapphire material production.
(5) Functional Optoelectronic Materials: Serving as critical high-temperature reaction vessels for laboratory R&D and material synthesis.
Specifications of CTIA's Tungsten Crucibles
Purity: ≥ 99.95%
Density: 17.8 ~ 18.3 g/cm³
Diameter: 80 ~ 600 mm
Height: 80 ~ 800 mm
Wall Thickness: 2 ~ 30 mm
With over 30 years of experience in tungsten crucible manufacturing, CTIA GROUP provides engineered solutions optimized for sapphire crystal growth furnace thermal fields and specific process requirements. Through systematic control of wall thickness uniformity, structural strength, and thermal compatibility, CTIA delivers integrated solutions from raw material engineering to precision machining.
For any inquiry, please contact tungsten crucible manufacturer: CTIA GROUP
Email: sales@chinatungsten.com
Tel: 0086 592 5129696 / 0086 592 5129595
Website: www.tungsten.com.cn
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